Estimated error of XRD intensity is 10 .Figure 2. XRD degradation per unit fluence YXD of polycrystalline SiO2 film (o, present outcome) and GYKI 52466 site sputtering yield Ysp (x) of amorphous (or vitreous)-SiO2 ( , x)) and movie of SiO2 ( , , x, , ) being a function of electronic stopping power (Se). Information ( , ) from (Qiu et al.) [45], from (Sugden et al.) [46], (x) from (Matsnami et al.) [47,48], from (Arnoldbik et al.) [49] and from (Toulemonde et al.) [51]. Se is calculated utilizing SRIM2013, and power-law fits of YXD ((0.0545Se)two.9) and Ysp ((0.62Se)three.0) are indicated by blue and black dotted lines, respectively. Power-law fit ( YXD ((0.055Se)three.4, TRIM1997) and Ysp ((0.58Se)three.0, TRIM1985 through SRIM2010) from [47,48,51] are indicated by black and green dashed lines. Harm cross sections are obtained by RBS-C and by TEM from [5].Quantum Beam Sci. 2021, 5,6 ofTable 1. XRD data of SiO2 films. Ion, GLPG-3221 site incident vitality (E in MeV), XRD intensity degradation (YXD ), suitable E (MeV) thinking of the power reduction from the film and electronic stopping energy in keV/nm (Se ) acceptable for YXD (see text). Se from SRIM2013. The deviation Se = (Se /Se (E) – one) a hundred is also given. Ion58 Ni 136 Xe 136 XeEnergy (MeV) 90 100YXD (10-12 cm2 ) 0.066 0.27 0.E (MeV) 84.five 91.0Se (keV/nm) seven.246 11.56 14.Se -0.32 -3.two -1.The electronic stopping electrical power (Se ) ideal for XRD intensity degradation is calculated working with SRIM 2013, making use of a half-way approximation the ion loses its power for half in the movie thickness ( 0.75 ), i.e., Se = Se (E) with E = E(incidence) – Se (E) 0.75 (Table 1). The correction for the film thickness on Se seems to be a few percent. It truly is observed that the incident charge (Ni10 , Xe14 ) differs through the equilibrium charge (19, 25 and 30 for 90 MeV Ni, 100 MeV Xe and 200 MeV Xe, respectively (Shima et al.) [81], and 18.two, 23.9 and 29.3 (Schiwietz et al.) [82]), each staying in excellent agreement. Following [64], the characteristic length (LEQ = 1/(electron loss cross-section instances N)) for attaining the equilibrium charge is estimated for being 8.seven, 8.3 and seven.9 nm for 90 MeV Ni10 , a hundred MeV Xe14 and 200 MeV Xe14 , respectively, through the empirical formula on the single-electron reduction cross-section 1L (10-16 cm2 ) of 0.52 (90 MeV Ni10 ), 0.fifty five (a hundred MeV Xe14 ) and 0.57 (200 MeV Xe14 ) [83,84], N (2.two 1022 Si cm-3 ) becoming the density, and (target atomic amount)2/3 dependence getting incorporated. Here, 1L = 1L (Si) 21L (O), ionization probable IP = 321 eV [85,86] with all the amount of removable electrons Neff = eight and IP = 343 eV with Neff = twelve are employed for Ni10 and Xe14 . LEQ is much smaller compared to the movie thickness and consequently the charge-state effect is insignificant. The sputtering yields Ysp of SiO2 (typical incidence) are summarized in Table 2 for that comparison of your Se dependence on the XRD degradation yields YXD . You will discover various versions of TRIM/SRIM starting in 1985, and in this event, the outcomes utilised the most recent edition of SRIM2013 are compared with these earlier versions. First of all, the correction over the stopping energy and projected assortment for carbon foils (2020 nm), which are utilised to realize the equilibrium charge incidence, is much less than a handful of , except for low-energy Cl ions (numerous ). Secondly, Se by CasP (version 5.two) differs 30 from that by SRIM 2013. Figure two displays the Se dependence in the XRD degradation yields YXD and Ysp . The two YXD and Ysp match on the power-law of Se , along with the exponents of XRD degradation NXD = 2.9 and Nsp = 3 (sputt.